AWARDEE OF THCHNOLOGICAL SCIENCES PRIZE

WANG YANGYUAN

Wang Yangyuan, a scientist in microelectronics，was born in Jan. 1935 in Ningbo, Zhejiang Province of China,and graduated from Dept. of physics Peking Univ. in 1958.In 1995, he was elected the academician of Chinese Academy of Sciences. Now he is the dean of Institute of Mcroelectornics Peking University.
Wang Yangyuan’s achivements in sciences are as follows:
1. Oxidation dynamics and electronic characteristics of polysilicon film. Wang Yangyuan developed further the Deal-Grove formulas by proposing the “stress-enhanced” oxidation model and taking the feature parameters and the engineering application equation into account, and makes it be able to explain the oxidation characteristics of polysilicon as well as the oxidation of monocrystalline silicon. He also pointed out the system relationship of carrier mobility with doping density in plysilicon film. Wang Yanguan’s work is considered by many colleagues all over the world having resolved an important issue in the field of microelectronics and being important for guiding relative practices.
2. New devices and device models. Wang Yangyuan put forward the new model of the high-speed device with polysilicon as the emitter, and explained scientifically the temperature effects of the devices by using the model. In addition, Wang Yangyuan made researches on SOI-based new CMOS transistors. He put forward the new model as well as the new structure of the SOI-based high-speed low-power MOS-bipolar mixed transistors, which is cited many times in other academic papers written by the colleagues all over the world. In recent years, Wang Yangyuan is studying devices in the size of 90~50 nm and the circuits based on the devices. So far he has developed successfully several the devices with new structures.
3. Manufacture technologies and design platform for MEMS. Wang Yangyuan has developed five whole sets of MEMS processes, and set up the MEMS design technology that can match the current IC technology to a certain extent. Wang Yangyuan and China own the intellectual properties of all the above. Wang Yangyuan is also in charge of the work of developing successfully more than ten MEMS devices, including accelerometers, gyroscopes and RF switches, etc. Wang Yangyuan is promoting the industrialization of MEMS in China.
4. Be engaged in laying and developing the basis of the microelectronic industry in China. Wang Yangyuan was one of the pathbreakers of the silicon-gate-n-channel technology in the 70s of the 20th century. He made researches on the deep-sub-micron super-high-speed CMOS circuit based on polysilicon/silicide self-alignment techniques from 80s to 90s in the 20th century, which was considered to be very important for self-developing the VLSI/ULSI technology in China. Wang Yangyuan led and organized the successful development of the first big integrated ICCAD system, which laid the important technological basis for developing IC design industry in China. As one of the founders, Wang Yangyuan started up the SMIC-Semiconductor Manufacturing International Corporation Ltd., which makes the technology of the microelectronic industry in China keep pace with the state-of-the-art level in the world.
He directed 25 postgraduate students, 34 Ph.D. and 12 postdoctors, with more than 230 papers publicated, 6 books published and 9 invention patents autorized.