AWARDEE OF TECHNOLOGICAL SCIENCES PRIZE

QUE DUANLIN

Que Duanlin, professor of materials science at Zhejiang University, was born in May, 1928 in Fuzhou. He graduated from Xiamen University in 1951 and was elected the academician of Chinese Academy of Sciences in 1991.
He was one of the pioneers in the research of semiconductor in China. He began to study the thermo-electric materials in 1954, and furthermore, developed the thermoelectric generator in China. Since 1959, he changed his research interests into the purification of silane and silicon. In China, he firstly achieved the highly pure polycrystalline silicon by decomposition of silane in 1964. On the basis of this pioneering contribution, a research group was organized in Zhejiang University, which later developed a systematic and industry-proved process for the production of highly pure silane and polycrystalline silicon. This process has since been applied to produce highly pure silane for the past decades in China. This achievement once won the third-class award of National Invention Prize in 1980. Furthermore, he achieved the silicon crystals of detector-grade. In 1980s, he developed a silicon minority carrier lifetime measuring instrument based on the monochromatic infrared photoconductive decay, which was widely used in the factories and universities in China. This achievement also won the third-class award of National Invention Prize in 1988. His most important contribution in science and technology is the invention of Czochralski silicon growth process under nitrogen atmosphere at the reduced pressure. This invention was granted with 7 Chinese invention patents. The above-mentioned contribution won the second-class award of National Invention Prize in 1989. Since 1990, his group has made significant progress in the research of nitrogen-doped Czochralski silicon.