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Hao Yue was born in March 1958 in Chongqing City. He graduated from the Department of Technical Physics of Xidian University in 1982, and obtained his Masters degree of semiconductor physics and device there in 1985 and PhD degree of numerical mathematics from Xian Jiaotong University in 1990. He has been teaching in Xidian University since 1986， and now is the director of the scholarship committee of Defense Key Discipline Laboratory of Widebandgap Semiconductor Technology, and also a professor and doctoral advisor of Xidian University.
Prof. Haos major achievements are as follows:
1. Research on nitride wide bandgap semiconductor material, technology and specialized equipmentsNitride semiconductors are one of the ideal materials for manufacturing microwave and millimeterwave power devices. In order to solve the problem of high density of defects in GaN films, Hao Yue revealed the mechanism of defects formation, and proposed the novel methods of Pulse Timesharing Transport and Coronary Growth. He established Chinas proprietary three generation MOCVD System (2-6 inches) and developed world leading GaN material. After that, he independently put forward the novel structure of GaN microwave millimeter wave power devices with strainless backbarrier and groovegate floating field plate, and realized the manufacturing and application of the devices.
The successful industrialization of the domestic MOCVD system and the key technologies in of GaN microwave devices and photoelectronics devices gives birth to a 210 million RMB worth, and homemade highperformance GaN materials have been widely adopted and highly praised both by many scientific institutions in China and foreign nations such as Japan and Singapore.
His success in wide bandgap GaN, won the second prize of National Award for Technological Invention in 2009.
2. Promotion of the industrialization of GaNbased photoelectron technology
As an important material, GaNbased wide bandgap semiconductors can be widely used in photoelectronic and solidstate lighting industry. The proposed MOCVD fabrication techniques have turned into the core technologies of the solidstate lighting industry of Shaanxi Province, and given a major boost to the regional economy. The relative research findings have won the first prize of Shaanxi Province Science and Technology Award in 2005.
3. Semiconductor device reliability techniques and applications
Prof. Hao put forward in 1994 the Enhanced TDDB Breakdown Model of the substrate hot carriers, elicited the new method for reliability failure and evaluation. Corresponding models were proposed and established. This finding won the third prize of National Science and Technology Progress Award in 1998.
In recent years，Hao Yue and his team have contributed more than 300 academic papers to influential journals, of which approximately 200 have been SCI indexed, with 64 national patents granted and 4 software copyrights registered.
Hao Yue himself has won the second prize of National Award for Technological Invention (2009, ranking 1st), the second prize of National Prize for Progress in Science and Technology (2008, ranking 5th), the third prize of National Prize for Progress in Science and Technology (1998，ranking 1st), and a dozen of provincial and ministerial scientific research awards. He has published 3 monographs and guided more than 60 graduate students.
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