AWARDEE OF PHYSICS PRIZE

XIE XIDE

Abstract

Professor Xie Xide,female, physicist,was born in March,1921 in Quanzhou,Fujian Province. She graduated from Xiamen University in 1946,and received her Ph.D.in 1951 from the Department of Physics of Massachusetts Institute of Technology.Since 1952 she joined the faculty of Fudan University,served as the vice-president of the University from 1978-1983 and president from 1983-1988.She is a member of the Chinese Academy of Sciences,fellow of the Third World Academy of Sciences and has been awarded 12 honorary degrees in doctor of sciences and in doctor of engineering by universities and colleges in the U.S.A.,U.K.Japan,Canada and Hong Kong.
She is one of the promoters and initiators of teaching and research in semiconductor physics and surface physics in China.Her major interest of research is in theoretical studies of electronic states of semiconductor surfaces and interfaces.Her work on theoretical studies of electronic states of semiconductor surfaces,nickel silicides and silicon interfaces,electronic properties of chemisorption of metals on semiconductor surfaces and metal semiconductor interfaces,as well as theoretical studies of geometrical structures,growth and phonon states of germanium/silicon superlattices have won the second class awards for contribution to the advancement of science and technology by the State Education Commission.